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BC857CDW1T1G
記述:
BC857CDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
部門:
分離した半導体
指定
Part Number:
BC857CDW1T1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BC857CDW1T1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.24
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Width:
1.35 mm
Length:
2.2 mm
Polarity:
PNP
Packaging:
Tape and Reel
Case/Package:
SOT-363-6
Current Rating:
-100 mA
Contact Plating:
Tin
Number of Elements:
2
Transition Frequency:
100 MHz
Max Breakdown Voltage:
45 V
Max Power Dissipation:
380 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
45 V
Collector Emitter Saturation Voltage:
-650 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
2422 In Stock
Applications:
Data storage
Height:
1.1 mm
hFE Min:
420
Frequency:
100 MHz
Schedule B:
8541210080
Max Frequency:
100 MHz
Number of Pins:
6
Power Dissipation:
380 mW
Voltage Rating (DC):
-45 V
Element Configuration:
Dual
Max Collector Current:
100 mA
Gain Bandwidth Product:
100 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
50 V
Collector Emitter Breakdown Voltage:
45 V
モデル番号:
BC857CDW1T1G
導入
BC857CDW1T1G Overview\\\\nBC857CDW1T1G is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BC857CDW1T1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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