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HN3C51F-GR(TE85L,F
記述:
HN3C51F-GR(TE85L,F datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
部門:
分離した半導体
指定
Part Number:
HN3C51F-GR(TE85L,F
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
HN3C51F-GR(TE85L,F More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Polarity:
NPN
Case/Package:
SOT-26
Power Dissipation:
300 mW
Transition Frequency:
100 MHz
Max Breakdown Voltage:
120 V
Max Power Dissipation:
300 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
300 mV
Collector Emitter Saturation Voltage:
300 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
207 In Stock
Applications:
Datacom module
Power delivery
Enterprise projectors
hFE Min:
200
Frequency:
100 MHz
Number of Pins:
6
Number of Elements:
2
Element Configuration:
Dual
Max Collector Current:
100 mA
Gain Bandwidth Product:
100 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
120 V
Collector Emitter Breakdown Voltage:
120 V
モデル番号:
HN3C51F-GR (TE85L,F)
導入
HN3C51F-GR(TE85L,F Overview\\nHN3C51F-GR(TE85L,F is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN3C51F-GR(TE85L,F high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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