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BFP620H7764XTSA1
記述:
BFP620H7764XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
部門:
分離した半導体
指定
Part Number:
BFP620H7764XTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BFP620H7764XTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.62
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Gain:
21.5 dB
Polarity:
NPN
Packaging:
Tape & Reel
Case/Package:
SOT
Noise Figure:
0.7 dB
Number of Pins:
4
Package Quantity:
3000
Number of Elements:
1
Max Breakdown Voltage:
2.8 V
Max Power Dissipation:
185 mW
Min Operating Temperature:
-65 °C
Collector Base Voltage (VCBO):
7.5 V
Collector Emitter Breakdown Voltage:
2.8 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
9437 In Stock
Applications:
Medical
Hybrid, electric & powertrain systems
Mount:
Surface Mount
Frequency:
65 GHz
Power Gain:
21.5 dB
Hold Current:
100 mA
Power Rating:
1 W
Contact Plating:
Tin
Power Dissipation:
185 mW
Transition Frequency:
65 GHz
Max Collector Current:
80 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
1.2 V
Collector Emitter Voltage (VCEO):
2.3 V
Max Repetitive Reverse Voltage (Vrrm):
15 V
モデル番号:
BFP620H7764XTSA1
導入
BFP620H7764XTSA1 Overview\\\\nBFP620H7764XTSA1 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFP620H7764XTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensivel
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