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IRF7380TRPBF
記述:
IRF7380TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
部門:
分離した半導体
指定
Part Number:
IRF7380TRPBF
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IRF7380TRPBF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.01
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.5 mm
Fall Time:
17 ns
Rise Time:
10 ns
Schedule B:
8541290080
Case/Package:
SOIC
Contact Plating:
Tin
Input Capacitance:
660 pF
Threshold Voltage:
4 V
Number of Elements:
2
On-State Resistance:
73 mΩ
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
61 mΩ
Continuous Drain Current (ID):
3.6 A
Drain to Source Voltage (Vdss):
80 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
3609 In Stock
Applications:
Motor drives
Lighting
Test & measurement
Width:
4 mm
Length:
5 mm
Packaging:
Tape & Reel
Rds On Max:
73 mΩ
Nominal Vgs:
4 V
Number of Pins:
8
Package Quantity:
4000
Power Dissipation:
2 W
Number of Channels:
2
Turn-On Delay Time:
9 ns
Turn-Off Delay Time:
41 ns
Max Power Dissipation:
2 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
80 V
モデル番号:
IRF7380TRPBF
導入
IRF7380TRPBF Overview\\\\nIRF7380TRPBF is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IRF7380TRPBF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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