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IPG20N04S412ATMA1
記述:
IPG20N04S412ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
部門:
分離した半導体
指定
Part Number:
IPG20N04S412ATMA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IPG20N04S412ATMA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.06
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Width:
6.15 mm
Length:
5.15 mm
Packaging:
Tape & Reel
Rds On Max:
12.2 mΩ
Number of Pins:
8
Input Capacitance:
1.13 nF
Turn-On Delay Time:
9 ns
Turn-Off Delay Time:
10 ns
Max Power Dissipation:
41 W
Max Operating Temperature:
175 °C
Drain to Source Resistance:
12.2 mΩ
Continuous Drain Current (ID):
20 A
Drain to Source Breakdown Voltage:
40 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
3623 In Stock
Applications:
Test & measurement
Hybrid, electric & powertrain systems
Broadband fixed line access
Height:
1 mm
Fall Time:
8 ns
Rise Time:
2 ns
Schedule B:
8541290080
Package Quantity:
5000
Power Dissipation:
41 W
On-State Resistance:
12.2 mΩ
Element Configuration:
Dual
Max Dual Supply Voltage:
40 V
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
40 V
モデル番号:
IPG20N04S412ATMA1
導入
IPG20N04S412ATMA1 Overview\\\\nIPG20N04S412ATMA1 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IPG20N04S412ATMA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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