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SI5902BDC-T1-GE3
記述:
SI5902BDC-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
SI5902BDC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI5902BDC-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.33
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Weight:
84.99187 mg
Rds On Max:
65 mΩ
Schedule B:
8541290080
Case/Package:
SMD/SMT
Input Capacitance:
220 pF
Threshold Voltage:
1.5 V
Number of Elements:
2
Turn-Off Delay Time:
10 ns
Max Power Dissipation:
3.12 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
22 In Stock
Applications:
Grid infrastructure
Data center & enterprise computing
Lighting
Height:
1.1 mm
Packaging:
Tape & Reel (TR)
Resistance:
65 mΩ
Nominal Vgs:
1.5 V
Number of Pins:
8
Power Dissipation:
1.5 W
Number of Channels:
2
Turn-On Delay Time:
4 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
53 mΩ
Continuous Drain Current (ID):
3.7 A
Drain to Source Voltage (Vdss):
30 V
モデル番号:
SI5902BDC-T1-GE3
導入
SI5902BDC-T1-GE3 Overview\\\\nSI5902BDC-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI5902BDC-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehens
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