english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
NVMFD5C650NLT1G
記述:
NVMFD5C650NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
部門:
分離した半導体
指定
Part Number:
NVMFD5C650NLT1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NVMFD5C650NLT1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$2.23
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Height:
1.1 mm
Power Dissipation:
125 W
Turn-On Delay Time:
13 ns
Max Operating Temperature:
175 °C
Drain to Source Resistance:
4.6 mΩ
Continuous Drain Current (ID):
111 A
Drain to Source Voltage (Vdss):
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
4336 In Stock
Applications:
Wearables (non-medical)
Industrial transport (non-car & non-light truck)
Hybrid, electric & powertrain systems
Schedule B:
8541290080
Number of Channels:
2
Turn-Off Delay Time:
37 ns
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
175 °C
Drain to Source Breakdown Voltage:
60 V
モデル番号:
NVMFD5C650NLT1G
導入
NVMFD5C650NLT1G Overview\\\\nNVMFD5C650NLT1G is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NVMFD5C650NLT1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
RFQを送りなさい
標準的:
MOQ: