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IRFI4212H-117P
記述:
IRFI4212H-117P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
部門:
分離した半導体
指定
Part Number:
IRFI4212H-117P
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IRFI4212H-117P More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.93
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Height:
9.02 mm
Fall Time:
4.3 ns
Rds On Max:
72.5 mΩ
Schedule B:
8541290080
Case/Package:
TO-220-5
Number of Pins:
5
Input Capacitance:
490 pF
Threshold Voltage:
5 V
On-State Resistance:
72.5 mΩ
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
72.5 mΩ
Continuous Drain Current (ID):
11 A
Drain to Source Voltage (Vdss):
100 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
540 In Stock
Applications:
Gaming
Enterprise projectors
Portable electronics
Width:
4.83 mm
Length:
10.67 mm
Rise Time:
8.3 ns
Resistance:
72.5 MΩ
Nominal Vgs:
5 V
Recovery Time:
54 ns
Package Quantity:
1000
Power Dissipation:
18 W
Turn-On Delay Time:
4.7 ns
Turn-Off Delay Time:
9.5 ns
Max Power Dissipation:
18 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
100 V
モデル番号:
IRFI4212H-117P
導入
IRFI4212H-117P Overview\\\\nIRFI4212H-117P is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IRFI4212H-117P high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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