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SI3552DV-T1-E3
記述:
SI3552DV-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
SI3552DV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI3552DV-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.68
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1 mm
Weight:
19.986414 mg
Packaging:
Digi-Reel®
Rds On Max:
105 mΩ
Schedule B:
8541290080
Case/Package:
TSOP
Power Dissipation:
1.15 W
Number of Channels:
2
Turn-On Delay Time:
8 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
175 mΩ
Continuous Drain Current (ID):
2.5 A
Drain to Source Voltage (Vdss):
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
499 In Stock
Applications:
Industrial transport (non-car & non-light truck)
Portable electronics
Home theater & entertainment
Width:
1.65 mm
Length:
3.05 mm
Fall Time:
7 ns
Rise Time:
12 ns
Resistance:
200 mΩ
Nominal Vgs:
1 V
Number of Pins:
6
Threshold Voltage:
1 V
Number of Elements:
2
Turn-Off Delay Time:
12 ns
Max Power Dissipation:
1.15 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
30 V
モデル番号:
SI3552DV-T1-E3
導入
SI3552DV-T1-E3 Overview\\\\nSI3552DV-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI3552DV-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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