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SI4909DY-T1-GE3
記述:
SI4909DY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
SI4909DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI4909DY-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.05
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Weight:
506.605978 mg
Packaging:
Cut Tape
Rds On Max:
27 mΩ
Case/Package:
SOIC
Input Capacitance:
2 nF
Threshold Voltage:
-1.2 V
Number of Elements:
2
Turn-Off Delay Time:
50 ns
Max Power Dissipation:
3.2 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
-40 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
9074 In Stock
Applications:
Building automation
Motor drives
Height:
1.75 mm
Fall Time:
13 ns
Rise Time:
9 ns
Schedule B:
8541290080
Number of Pins:
8
Power Dissipation:
2 W
Number of Channels:
2
Turn-On Delay Time:
10 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
21 mΩ
Continuous Drain Current (ID):
-8 A
Drain to Source Voltage (Vdss):
-40 V
モデル番号:
SI4909DY-T1-GE3
導入
SI4909DY-T1-GE3 Overview\\\\nSI4909DY-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI4909DY-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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