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SI4900DY-T1-GE3
記述:
SI4900DY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
SI4900DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI4900DY-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.26
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.55 mm
Weight:
186.993455 mg
Packaging:
Cut Tape
Rds On Max:
58 mΩ
Case/Package:
SOIC N
Input Capacitance:
665 pF
Threshold Voltage:
2.5 V
Number of Elements:
2
Turn-Off Delay Time:
15 ns
Max Power Dissipation:
2 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
3971 In Stock
Applications:
Advanced driver assistance systems (ADAS)
Aerospace & defense
Wireless infrastructure
Width:
4 mm
Length:
5 mm
Fall Time:
10 ns
Rise Time:
65 ns
Schedule B:
8541290080
Number of Pins:
8
Power Dissipation:
2 W
Number of Channels:
2
Turn-On Delay Time:
15 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
58 mΩ
Continuous Drain Current (ID):
4.3 A
モデル番号:
SI4900DY-T1-GE3
導入
SI4900DY-T1-GE3 Overview\\\\nSI4900DY-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI4900DY-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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