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IRFHM8363TRPBF
記述:
IRFHM8363TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
部門:
分離した半導体
指定
Part Number:
IRFHM8363TRPBF
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IRFHM8363TRPBF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.99
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Fall Time:
33 ns
Rise Time:
94 ns
Schedule B:
8541290080
Case/Package:
QFN EP
Package Quantity:
4000
Power Dissipation:
2.7 W
Number of Channels:
2
Turn-On Delay Time:
14 ns
Turn-Off Delay Time:
12 ns
Max Power Dissipation:
2.7 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
2277 In Stock
Applications:
Gaming
PC & notebooks
Tablets
Height:
1 mm
Packaging:
Tape & Reel
Rds On Max:
14.9 mΩ
Nominal Vgs:
1.8 V
Number of Pins:
8
Input Capacitance:
1.165 nF
Threshold Voltage:
1.8 V
Number of Elements:
2
On-State Resistance:
14.9 mΩ
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
16.3 mΩ
Continuous Drain Current (ID):
11 A
Drain to Source Voltage (Vdss):
30 V
モデル番号:
IRFHM8363TRPBF
導入
IRFHM8363TRPBF Overview\\\\nIRFHM8363TRPBF is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IRFHM8363TRPBF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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