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NTHD3100CT1G
記述:
NTHD3100CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
部門:
分離した半導体
指定
Part Number:
NTHD3100CT1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NTHD3100CT1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.62
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Width:
1.65 mm
Length:
3.05 mm
Fall Time:
11.7 ns
Rise Time:
11.7 ns
Schedule B:
8541290080
Current Rating:
2.9 A
Input Capacitance:
165 pF
Threshold Voltage:
-1.5 V
Turn-On Delay Time:
6.3 ns
Voltage Rating (DC):
20 V
Max Power Dissipation:
1.1 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
2045 In Stock
Applications:
Gaming
Industrial transport (non-car & non-light truck)
Connected peripherals & printers
Height:
1.05 mm
Weight:
4.535924 g
Packaging:
Tape and Reel
Rds On Max:
80 mΩ
Case/Package:
SMD/SMT
Number of Pins:
8
Power Dissipation:
1.1 W
Number of Elements:
2
Turn-Off Delay Time:
16 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
64 mΩ
Continuous Drain Current (ID):
3.2 A
Drain to Source Breakdown Voltage:
-20 V
モデル番号:
NTHD3100CT1G
導入
NTHD3100CT1G Overview\\\\nNTHD3100CT1G is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NTHD3100CT1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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