english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
SIR808DP-T1-GE3
記述:
SIR808DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
SIR808DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SIR808DP-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Fall Time:
7 ns
Rds On Max:
8.9 mΩ
Number of Pins:
8
Threshold Voltage:
1 V
Turn-On Delay Time:
5 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
7.4 mΩ
Continuous Drain Current (ID):
20 A
Drain to Source Breakdown Voltage:
25 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
299 In Stock
Applications:
Wired networking
Power delivery
Portable electronics
Weight:
506.605978 mg
Rise Time:
10 ns
Case/Package:
SOIC
Input Capacitance:
815 pF
Number of Channels:
1
Turn-Off Delay Time:
14 ns
Max Power Dissipation:
29.8 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
25 V
モデル番号:
SIR808DP-T1-GE3
導入
SIR808DP-T1-GE3 Overview\\nSIR808DP-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SIR808DP-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
RFQを送りなさい
標準的:
MOQ: