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2N7002E-T1-E3
記述:
2N7002E-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
2N7002E-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
2N7002E-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.02 mm
Weight:
1.437803 g
Rds On Max:
3 Ω
Schedule B:
8541210080
Case/Package:
SOT-23
Contact Plating:
Tin
Power Dissipation:
350 mW
Number of Channels:
1
Turn-On Delay Time:
13 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
7.5 Ω
Continuous Drain Current (ID):
240 mA
Drain to Source Voltage (Vdss):
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
241 In Stock
Applications:
Aerospace & defense
Motor drives
Tablets
Width:
1.4 mm
Length:
3.04 mm
Packaging:
Digi-Reel®
Resistance:
3 Ω
Nominal Vgs:
2 V
Number of Pins:
3
Input Capacitance:
21 pF
Threshold Voltage:
2 V
Number of Elements:
1
Turn-Off Delay Time:
18 ns
Max Power Dissipation:
350 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
70 V
モデル番号:
2N7002E-T1-E3
導入
2N7002E-T1-E3 Overview\\n2N7002E-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2N7002E-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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