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SUD23N06-31L-E3
記述:
SUD23N06-31L-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
SUD23N06-31L-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SUD23N06-31L-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
2.3876 mm
Weight:
1.437803 g
Rise Time:
15 ns
Resistance:
31 mΩ
Termination:
SMD/SMT
Number of Pins:
3
Power Dissipation:
100 W
Number of Channels:
1
Turn-On Delay Time:
8 ns
Turn-Off Delay Time:
30 ns
Max Power Dissipation:
100 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
670 In Stock
Applications:
Advanced driver assistance systems (ADAS)
Industrial transport (non-car & non-light truck)
PC & notebooks
Width:
6.22 mm
Length:
6.7056 mm
Fall Time:
25 ns
Rds On Max:
31 mΩ
Nominal Vgs:
2 V
Case/Package:
DPAK
Input Capacitance:
670 pF
Threshold Voltage:
2 V
Number of Elements:
1
Dual Supply Voltage:
60 V
Element Configuration:
Single
Max Operating Temperature:
175 °C
Drain to Source Resistance:
31 mΩ
Continuous Drain Current (ID):
23 A
Drain to Source Breakdown Voltage:
60 V
モデル番号:
SUD23N06-31L-E3
導入
SUD23N06-31L-E3 Overview\\nSUD23N06-31L-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SUD23N06-31L-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
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