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SIHB30N60E-E3
記述:
SIHB30N60E-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
SIHB30N60E-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SIHB30N60E-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Fall Time:
36 ns
Rise Time:
32 ns
Case/Package:
TO-263-3
Input Capacitance:
2.6 nF
Number of Channels:
1
Turn-On Delay Time:
19 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
125 mΩ
Continuous Drain Current (ID):
29 A
Drain to Source Breakdown Voltage:
600 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
905 In Stock
Applications:
Wireless infrastructure
Grid infrastructure
Home theater & entertainment
Weight:
1.437803 g
Packaging:
Tape & Reel (TR)
Rds On Max:
125 mΩ
Number of Pins:
3
Power Dissipation:
250 W
Number of Elements:
1
Turn-Off Delay Time:
63 ns
Max Power Dissipation:
250 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
600 V
モデル番号:
SIHB30N60E-E3
導入
SIHB30N60E-E3 Overview\\nSIHB30N60E-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SIHB30N60E-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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