english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
SI3812DV-T1-E3
記述:
SI3812DV-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
SI3812DV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI3812DV-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1 mm
Weight:
19.986414 mg
Rise Time:
30 ns
Case/Package:
SOT-23-6
Power Dissipation:
830 mW
Turn-On Delay Time:
10 ns
Max Power Dissipation:
830 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
12 V
Drain to Source Voltage (Vdss):
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
579 In Stock
Applications:
Building automation
Pro audio, video & signage
Tablets
Width:
1.65 mm
Length:
3.05 mm
Fall Time:
30 ns
Rds On Max:
125 mΩ
Number of Pins:
6
Number of Channels:
1
Turn-Off Delay Time:
14 ns
Max Operating Temperature:
150 °C
Drain to Source Resistance:
125 mΩ
Continuous Drain Current (ID):
2.4 A
Drain to Source Breakdown Voltage:
20 V
モデル番号:
SI3812DV-T1-E3
導入
SI3812DV-T1-E3 Overview\\nSI3812DV-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI3812DV-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
RFQを送りなさい
標準的:
MOQ: