english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
SIR432DP-T1-GE3
記述:
SIR432DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
部門:
分離した半導体
指定
Part Number:
SIR432DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SIR432DP-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Rise Time:
10 ns
Nominal Vgs:
4 V
Input Capacitance:
1.17 nF
Threshold Voltage:
4 V
Turn-Off Delay Time:
20 ns
Max Power Dissipation:
54 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
100 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
352 In Stock
Applications:
Wireless infrastructure
Electronic point of sale (EPOS)
Data storage
Fall Time:
8 ns
Rds On Max:
30.6 mΩ
Number of Pins:
8
Power Dissipation:
54 W
Number of Elements:
1
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
30.6 mΩ
Continuous Drain Current (ID):
28.4 A
Drain to Source Breakdown Voltage:
100 V
モデル番号:
SIR432DP-T1-GE3
導入
SIR432DP-T1-GE3 Overview\\nSIR432DP-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SIR432DP-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
RFQを送りなさい
標準的:
MOQ: